Hao Zeng

PhD

Hao Zeng.

Hao Zeng

PhD

Hao Zeng

PhD

Specialties

Nanoscale magnetism, Quantum sensing, Spintronics, Ionic semiconductors

Education

  • BS, Physics, Nanjing University, China – 1993
  • PhD, Physics, University of Nebraska – 2001
  • Postdoctoral Research at IBM T.J. Watson Research Center – 2001-2004

Research Area

Specialties

Nanoscale magnetism, Quantum sensing, Spintronics, Ionic semiconductors

Research Interests

The first thrust of our research focuses on investigating the intriguing physical phenomena that arise when materials are reduced to dimensions below their fundamental length scales. At these reduced dimensions, we are particularly interested in exploring the fundamental spin and magnetic properties of materials, ranging from 2D magnets to 0D nanoparticles.

To synthesize these materials, we employ a range of techniques, including physical and chemical vapor deposition, as well as chemical solution phase methods. To tune the properties of the host materials, we utilize techniques such as doping, alloying, and heterostructure formation.

Our research employs a range of probes, including magnetic, charge transport, and magneto-optical probes, to study the physical properties of these materials. Our current research interests include developing novel high Curie temperature non-van der Waals 2D magnets and controlling their magnetism via doping and electric gating. Additionally, we investigate magnetic proximity effects in 2D magnetic/semiconductor heterostructures. The interest in these materials is driven by their potential to be utilized in various applications in the fields of electronics, spintronics, and valleytronics.

The second thrust of our research aims to advance the development of quantum sensors that utilize atomic spin defects. The development of these quantum sensors has the potential to revolutionize our ability to detect and map feeble magnetic fields, leading to advances in a wide range of fields including materials science, electronics, chemistry, and biology.

In addition, we are actively engaged in the design and development of novel materials for energy applications. Currently, we are focused on the development of chalcogenide perovskites, which represent an emerging class of unconventional ionic semiconductors. Our project aims to explore the unique electronic and optical properties of these materials, with the goal of identifying new avenues for energy generation and optoelectronic applications.

Awards and Honors

  • UB Exceptional Scholar – Sustained Achievement Award, 2022
  • UB Exceptional Scholar – Young Investigator Award, 2009
  • National Science Foundation's CAREER Award, 2006
  • IBM Research Division Award, 2003

Selected Publications

For a complete list of publications, please see Google Scholar.
  • M. Bian et al, “Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moiré Supercrystal”, Advanced Materials 34, 2200117 (2022).
  • Z. Yu et al, “Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing”, Nano Energy 85, 105959 (2021).
  • X. Wei et al, “Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics”, Nano Energy 68, 104317 (2020).
  • T. Norden et al, “Giant valley splitting in monolayer WS2 by magnetic proximity effect”, Nature communications 10, 1-10 (2019).
  • J. Zhou et al, “Observing crystal nucleation in four dimensions using atomic electron tomography”, Nature 570, 500-503 (2019).
  • C. Zhao et al, “Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field,” Nature nanotechnology 12, 757-762 (2017).
  • Y. Yang, et al, “Deciphering chemical order/disorder and material properties at the single-atom level,” Nature, 542, 75–79 (2017).